| 摘要 |
PURPOSE: To produce a thin film composed of charge transfer rate-determining element and excellent in smoothness. CONSTITUTION: Pulse plating is executed by following conditions. A NiSO4 .6H2 O (0.1mol/l) H3 BO3 (0.5mol/l) electrolyte containing Ni is used as the electrolyte. The hydrogen ion concn. of the electrolyte is pH4 and the temp. is 25 deg.C. Where, L means 1000cm<3> . The pulse potential Thigh is controlled to -2500mV. An impressing time Thigh is controlled to 100μs and the ratio (r) (=Tlow/Thigh) of the pulse potential impressing time is controlled to 1. The electrodeposition is executed until the thickness of an electrodeposition film reaches 50nm. As a result, the thin film of the charge transfer rate-determining element such as nickel, iron, cobalt is produced without hydrogen mark. And the production cost is reduced since a low concn. solution is used. Particularly the method is useful for the production of an IC reed frame, a magnetic head, the core of a coil.
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