POWER TRANSISTOR AND METHOD OF MANUFACTURING SAME

摘要

A multilayer power transistor includes an emitter zone having two layer of different diping levels, a less highly doped layer and a more highly doped surface region. The base zone of the transistor includes a central base region of higher doping level than that of the remainder of the base zone and which extends into the emitter surface region, This configuration results in a structure which exhibits a delocalization effect at any current level and improved secondary breakdown characteristics.