| 摘要 |
PURPOSE:To produce the film characteritsitc in the lot and between the lots with a good reproducibility, by arranging adjusting means of reaction gas component ratio and control apparatus of reaction gas flowing amount etc. based on the detection signal of sputtering power source fluctuation at the reactive.sputtering apparatus. CONSTITUTION:Thin film manufacturing apparatus composed of the Ar gas introducing opening 10, the reaction gas N2 introducing opening 11, the reactive reaction vessel 1 and the electric power source 8 etc., is constructed as follows; Output signal of the gas analysis means 13 in the vessel 1, is input in the computor 16 and N2 is controlled so as to be the set up value of N2/Ar through the flowing amount controller 19 and valve by comparing with the standard value by comparing means. On the one hand, sputtering voltage of the target 7 measured by the direct current voltmeter 9, is input in the computor 16 and is compared with the standard value and then, thin film is formed on the substrate placed on the guide rail 2', by controlling the total amount of reaction gas at a fixed value based on the above difference through the flowing amount controller 17 and the valve 18. Chemical thin film forming vessel and epitaxial thin film forming vessel may be used for the above mentioned vessel 1. |
