| 摘要 |
PURPOSE:To obtain a positive type resist material superior in dry etching resistance, sensitivity, and resolution, by copolymerizing benzyl methacrylate with a specified monomer. CONSTITUTION:Benzyl methacrylate (A), monomer incapable of cross-linking (methyl methacrylate, methylisopropenyl ketone, or the like) (B), and a monomer capable of cross-linking (a combination of methacrylic acid and methacryloyl chloride) are polymerized to form a copolymer (preferably, of 10,000-1 million molecular weight) for use in a resist material. This resist material is coated on a base to form a resist film, heat-treated at 120-250 deg.C to cross-link the copolymer and form a three-dimensional network resist film, and a pattern is formed by irradiating it by electron beams, X-rays, or other ionization radiation, and developing it. |
