发明名称 |
METHOD OF PREPARING A GETTERED SEMICONDUCTOR WAFER |
摘要 |
<p>Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800 DEG -1150 DEG C. for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600 DEG C., and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture.</p> |
申请公布号 |
EP0001794(B1) |
申请公布日期 |
1980.12.10 |
申请号 |
EP19780101194 |
申请日期 |
1978.10.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDMONDS, HAROLD DONALD;MARKOVITS, GARY |
分类号 |
B24B7/22;H01L21/304;H01L21/322;(IPC1-7):01L21/18 |
主分类号 |
B24B7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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