| 摘要 |
<p>PURPOSE:To heighten yield by a method wherein a compensating plate supporting a semiconductor element having PN-junction is formed in a laminated plate, and the side contacting with the element is made up by a main plate in a material, whose resisting property is low to an etching liquid for a semiconductor, and the reverse side by a by-plate with a high resisting property. CONSTITUTION:A compensating plate 32 is glued on the back of a semiconductor element 1 in which PN-junction is formed and the element 1 is supported, but the compensating plate 32 is made up in a laminated body at that time. That is, a main plate 12 in Mo, whose resisting property is low to a solution for etching a semiconductor material, is mounted at the side contacting with the element 1 of the compensating plate 32, and a by-plate 22 in W with a high resisting property is disposed at the side reverse to the side contacting with the element. Thus, since the Mo plate easy to be eroded when etching the element 1 is protected by means of the W plate with the high resisting property, oxidation and erosion are prevented, and the voltage drop of the element and the increase of thermal resistance can be avoided.</p> |
