| 摘要 |
PURPOSE:To always ensure the substrate voltage of the fixed level, by using the collector of the bipolar transistor for the voltage output end and then securing the sufficient saturation for the transistor with the voltage between the base and the emitter having a low level. CONSTITUTION:Both MOS transistor TR26 plus lateral NPNTR31 using uniconducting semiconductor substrate 21 for the base region are formed on substrate 21. The fixed voltage VSS is supplied to source electrode 27, and the common connection is secured among gate electrode 30, drain electrode 28 and emitter electrode 32 each. Then one end of coupling capacity 34 is connected to these joints, and furthermore clock signal is supplied to the other end of capacity 34. Then the drain or the source of TR26 are connected to the fixed voltage application point each to use the collector of TR31 for the voltage output end. And TR31 is saturated sufficiently with the voltage between the base and the emitter having a low level. As a result, the substrate voltage of the fixed level can always be secured althrough the MOS- type integrating device which supplies the substrate voltage may be formed even on a large scale. |
