发明名称 Process for producing a semiconductor device using a crystalline insulating substrate.
摘要 <p>In a process for producing a semiconductor device using an insulating substrate, a so called SOS device, a semiconductor layer is formed on the insulating film and semiconductor elements are formed in the semiconductor layer, material, which develops color with in the insulating substrate, is introduced in the substrate, and a color developed part of the insulating substrate is used as an identification mark of the substrate and the semiconductor elements. Cracking of the substrates due to formation of the identification mark is prevented.</p>
申请公布号 EP0020179(A1) 申请公布日期 1980.12.10
申请号 EP19800301857 申请日期 1980.06.04
申请人 FUJITSU LIMITED 发明人 SASAKI, NOBUO
分类号 H01L21/02;H01L21/265;H01L21/266;H01L21/86;H01L23/544;(IPC1-7):01L23/54;01L21/66 主分类号 H01L21/02
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