发明名称 |
Method for fabricating stacked semiconductor diodes for high power/low loss applications |
摘要 |
A semiconductor wafer is appropriately doped to create a P-N or P-I-N junction, and metallized on both its planar surfaces with electrode material. The wafer is then bonded to a second similarly processed wafer. Without damaging the semiconductor material, the stacked wafer is processed so as to delineate a plurality of diodes on each side of the center metallization, such that the diodes on each side are registered with each other. The center metallization is then cut so as to yield a plurality of stacked semiconductor diodes.
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申请公布号 |
US4237600(A) |
申请公布日期 |
1980.12.09 |
申请号 |
US19780961471 |
申请日期 |
1978.11.16 |
申请人 |
RCA CORP |
发明人 |
GOMBAR, ANNA M;MYKIETYN, EDWARD;ROSEN, ARYE |
分类号 |
H01L21/329;H01L23/482;H01L25/07;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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