| 摘要 |
PURPOSE:To increase the plasma etching speed of oxide substance in a method of selectively etching a thin film by implanting ion to the entire surface of a thin film substance oxide layer formed on a thin film substance. CONSTITUTION:When a silicon oxide film 2 is formed on the surface of a silicon substrate 1 and aluminum thin film 3 is evaporated thereon, an oxide film 4 is natually formed in contact with air. Then, a photoresist pattern 5 is formed thereon, and ion 6 is implanted onto the surface of the oxide film 4 to weaken the binding strength with the film 4 so as to strengthen the binding strength with the pattern 5. Thereafter, the aluminum thin film 3 is etched with plasma gas 7 to isolate the photoresist mask 5 so as to wire the aluminum thin film 3'. |
