METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A contact hole formation method using SAC(Self-Aligned Contact) technology is provided to simplify manufacturing process and to prevent electrical short by using a silicon nitride layer as an etching stopper. CONSTITUTION: A polysilicon layer(23) is deposited on a semiconductor substrate(21). An oxide layer(25) is formed on the polysilicon layer(23). The oxide layer(25) and the polysilicon layer(23) are etched using a word line mask. A silicon nitride layer(27) and an interlayer dielectric(29) are sequentially depositing on the resultant structure. Finally, the interlayer dielectric(29) and the nitride layer(27) are simultaneously etched by in-situ using a photoresist pattern(31) as a mask and the nitride layer(27) as an etching stopper, thereby forming a self-aligned contact hole(33).