| 摘要 |
PURPOSE:To eliminate disconnection of aluminum wire formed on a semiconductor substrate for a semiconductor device by reducing the thickness of the substrate at the peripheral edge becoming the field region of the substrate, burying it with laminate of a polycrystalline Si layer and an SiO2 film, and forming the entire surface substantially flat. CONSTITUTION:An SiO2 film 42 and an Si3N4 film 43 are sequentially laminated on an Si substrate 41, the field region at the peripheral edge is removed by a photoetching process, and the substrate 41 of this portion is also etched to reduce the thickness thereof. Then, a field SiO2 film 44 is coated from the side surface of the substrate 41 thus produced to the field region, polycrystalline Si layer 45 is grown on the entire surface, and an SiO2 film 46 is further laminated on the field region. In this manner, the surface of the substrate 41 is formed substantially flat, a thin gate SiO2 film 47 is formed on the element forming region, a polycrystalline Si gate electrode 47' is formed thereon, with the electrode 47' as a mask source and drain regios 49 and 50 are diffused and formed in the substrate 41, and aluminum wires 54 are mounted through an SiO2 film 51 on the regions 59 and 50. |
