| 摘要 |
PURPOSE:To avoid deterioration of an SiO2 layer insulation by a method wherein after an SiO2 film on a semiconductor substrate is converted into a layer containing Si3N4 on the surface through heat treatment in an atomosphere containing N2 a metal or semiconductor layer is laminated and sintered. CONSTITUTION:Adhesiveness between metals such as Al or Mo etc. and SiO2 becomes larger as these metals have susceptibility to oxidation, and oxidation transfer layer is generated at an interface by O2 of SiO2 being absorbed by active metals. It increases adhesiveness but in the other hand lessens a thickness of an SiO2 layer and decreases dielectric strength, and furthermore by metals such as Mo etc. which have more susceptibility to oxidization and more tendency to diffuse into the SiO2 layer overlaying on it, more deterioration of insulation occurs. After the SiO2 layer is treated in NH3 gas at high temperature and its surface is converted into an SiOxNy layer which is composed of mixture of SiO2 and Si3N4, an Al layer is laminated on it and sintered for example, and an unnecessary interfacial reaction is eliminated in addition of the SiOxNy layer eliminating generation and spreading of oxidation transfor layers, and insulation deterioration of the SiO2 layer also can be eliminated. |
