| 摘要 |
<p>A transistor structure has a collector region (11, 61), a base region (12, 62) and a stripe-form emitter zone (13, 63), of collector region conductivity type, formed within the base region (12, 62). Within the emitter zone (13, 63) isolation regions (14) or stabilizing resistor regions (64) of the base region conductivity type are formed to divide the emitter zone (13, 63) into small emitter regions (13-a, 13-b etc). The small emitter regions are connected in parallel by an emitter electrode (16a; 67a, 67b) which extends over the stripe-form emitter zone (13, 63). The emitter electrode is connected to each small emitter region directly or by way of a stabilizing resistor region (43, 53, 64).
<??>A plurality of stripe-form emitter zones (102, 113) can be connected in common (see Fig.7 or Fig. 8) by a region (101, 117) of the same conductivity type as the emitter zones (102, 113). To prevent parasitic transistor operation an isolation region (103) or a stabilizing resistor region (114) is disposed between an emitter zone (102, 113) and the connecting region (101, 117). </p> |
