发明名称 |
Open tube aluminum diffusion |
摘要 |
A method for forming a p-conductivity type layer in a semiconductor wafer using aluminum as a diffusion source and which can be carried out in an open diffusion tube is described. A variety of aluminum sources can be employed in an open tube. A stream of essentially oxygen-free inert gas provides transport for the dopant and prevents the entry of potentially contaminating ambient into the tube.
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申请公布号 |
US4235650(A) |
申请公布日期 |
1980.11.25 |
申请号 |
US19780939669 |
申请日期 |
1978.09.05 |
申请人 |
GENERAL ELECTRIC |
发明人 |
CHANG, MIKE F;ROESCH, ALFRED |
分类号 |
H01L21/22;H01L21/223;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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