| 摘要 |
PURPOSE:To enable to perform the adjustment of the input and output circuit accurately, by etching the surface of the high resistance board near the microstrip line. CONSTITUTION:Since the characteristic impedance of the microstrip line 13 is changed with the distance between the ground electrode 12 and the electrode 13 and the width of the electrode 13, the characteristic impedance can finely be changed by etching the vicinity of the electrode 13. In the monolithic integrated circuit, when the GaAs Schottky barrier gate type FET is used as the amplifying element and the gap capacitance 37 is desired to be decreased, it is simple by adjusting the gap with the etching. With this method, however, the capacitance can be adjusted toward the reduction and the inductance toward the increase only. |
