| 摘要 |
This invention relates to a process for manufacturing monocrystalline silicon. According to this process, the fused zone Z is formed on a cylinder (1) of polycrystalline silicon and a film (5) is "drawn" by means of a seed-plate (3). The fused zone Z is obtained by resorting to heating means, notably one or several electron guns whose beam is situated in a plane P2. By means of this process, monocrystalline silicon is manufactured in the form of tape. |
