发明名称 LASER ANNEALING APPARATUS AND ANNEALING METHOD OF SEMICONDUCTOR THIN FILM USING THE SAME
摘要 A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions. In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.
申请公布号 KR20050078187(A) 申请公布日期 2005.08.04
申请号 KR20040092186 申请日期 2004.11.12
申请人 HITACHI DISPLAYS, LTD. 发明人 HONGOU MIKIO;YAZAKI AKIO;HATANO MUTSUKO
分类号 H01L21/20;B23K26/073;B23K26/08;G02B27/09;G02F1/13;H01L21/268;H01L21/77;(IPC1-7):G02F1/13 主分类号 H01L21/20
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