| 摘要 |
PURPOSE:To eliminate reaction of aluminum with gold in case that the uppermost layer of a multilayer metallic films is formed of gold when plating silver thereon by continuously evaporating metal not reacted with aluminum and gold on the surface conductive path of aluminum. CONSTITUTION:An insulating film 32 is coated on a semiconductor substrate 31, an opening is perforated thereat, and a multilayer metallic film 37 is formed at the opening and its periphery. Then, aluminum 36 is evaporated, and selectively removed as required as a plating surface conductive bus. Thereafter, the metal not reacted with the aluminum 36 and gold are continuously evaporated as an upper electrode 38. Then, the surface of the element is coated with a photoresist film 35 except a silver electrode forming portion, silver is plated selectively on the electrode 38 in the opening of the film 35 to form a silver electrode 34. Thereafter, the aluminum 36 is all removed, and excessive metal layer 38 on the aluminum 36 is all removed. |
