| 摘要 |
PURPOSE:To provide enhanced heat resistance, ion etching resistance and resolving power and obtain a high sensitivity resist by using a homopolymer or a copolymer of specified malonic acid esters or a copolymer of the monomer and acrylic acid type ester. CONSTITUTION:A homopolymer or a copolymer of monomers represented by formula I (where each of R1 and R2 is 1-4C alkyl) or a copolymer of the monomer and a monomer represented by formual II [where R3 is CH3, CN, CONH2, F, Cl or Br and R4 is 1-4C (halogen-substituted) alkyl] is dissolved in a solvent to prepare a resist soln. This soln. is coated onto a silicon wafer and prebaked to form a resist film, which is then irradiated with radiation such as soft X-rays and developed to give a resist pattern with superior heat resistance. Accordingly, this resist is suitable for use in manufacture of a semiconductor, a photomask, etc. |
