| 摘要 |
PURPOSE:To improve joining pressure resistance of a dispersion layer, by providing an impurity-introduced semiconductor substrate's surface with an impurity-containing insulation layer and allowing it to disperse from the insulation layer over to the substrate. CONSTITUTION:By forming a thick oxide film 3 on a p-type substrate 1 selectively and opening a window on a thin oxide film 2 selectively, prepare an n-type dope polymer Si4 selectively. Prepare an n-layer 5 by dispersion from the layer 4. Remove the oxide film 2 by a mask of the layer 4. And then, by covering the layer 5 with a thin oxide film 7 and driving As ion into it, prepare an n-layer 6. By removing the oxide film 7 selectively, covering it with PSG9 and dispersing P in the layer 6, prepare an n-layer 10 which is deeper than the layer 6. As P has larger dispersion coefficient than As, the n-layer 10 becomes deeper improving the joining pressure resistance. And then, by opening a window as prescribed, preapre an electrode. It is possible by using this mechanism to obtain an EFT device whose input section has high joining pressure resistance. |
