| 摘要 |
PURPOSE:To prevent the quantity of the surface of a photoresist film mask from being changed and reduce a thermal influence upon a semiconductor substrate when a minute pattern is made of a high-melting-point metal material on the substrate by using the mask, by previously making a thin Al film on a resist film. CONSTITUTION:To make a minute pattern 5 of a high-melting-point metal material on a GaAs substrate 1, a positive resist film 2, and a thin Al film 3 and another positive resist film 4 are laminated on the substrate 1 first. The film 4 is exposed to light to make a prescribed pattern. A hole is opened through the film 3 by wet etching with not phosphoric acid or plasma etching with CCl4 while using the patterned film 4 as a mask. The film 4 is then removed. The film 2 is etched while using the film 3 are a mask, thereby exposing a prescribed part of the substrate 1. Pt, Ti and Au are coated as a laminated metal layer 5 all over the substrate. The film 2 is removed together with the films 3, 4 located on the film 2. As a result, only the patterned metal layer 5 is left on the substrate 1. |
