| 摘要 |
1494569 Semi-conductor devices FAIRCHILD CAMERA & INSTRUMENT CORP 14 March 1975 [18 April 1974] 10762/75 Heading H1K In a method of making an MOS IGFET in a semi-conductor substrate 10, source and drain regions 17, 18 are formed by diffusion from a deposited layer 16a-16c of dopant-containing material, e.g. B 2 O 3 , which is then separated from the substrate by the formation of an insulating region 20. The region 20 may be SiO 2 formed by thermal oxidation of the substrate and of a polysilicon gate electrode 15 and is produced after openings have been etched in the dopant-containing layer 16 over the regions 17, 18. Parts of the thermally-produced layer 20 and of another insulating layer 21 are removed over the source and drain regions 17, 18 for the deposition of contacts 23, e.g. of Al. A connection is also made to the gate electrode 15. The gate insulator 14 is also of SiO 2 . |
