发明名称 INSULATED GATE BIPOLAR TRANSISTOR RECTIFIER USING INVERTER
摘要 An IGBT(Insulated Gate Bipolar Transistor) rectifier using an inverter is provided to have high efficiency and reduce a weight without an overlapped portion of coils by laminating the coils of a barrel shape. An IGBT rectifier using an inverter includes a primary rectification unit(110), an inverter unit(120), a transformation unit(130), a secondary rectification unit(140), a control unit(150), and a driving unit(160). The primary rectification unit receives 3-phase AC power and converts the 3-phase AC power into DC power. The inverter unit converts the DC power converted through the primary rectification unit into AC power. The transformation unit converts AC voltage or current from the inverter unit. The secondary rectification unit rectifies the AC power from the inverter unit and the transformation unit into DC power through rectification diodes. The control unit controls a rectifier by detecting output voltage and current outputted through the secondary rectification unit. The driving unit outputs a driving signal according to a control order transmitted from the control unit.
申请公布号 KR100825475(B1) 申请公布日期 2008.04.28
申请号 KR20070060311 申请日期 2007.06.20
申请人 KOOSOO HEAVY ELECTRIC CO., LTD. 发明人 KIM, WON GOO
分类号 H02M7/537;H02M7/21 主分类号 H02M7/537
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