发明名称 |
Variable thickness self-aligned photoresist process |
摘要 |
A process for forming with a single masking step regions of different thicknesses in a photo-sensitive layer is disclosed. A masking member or reticle includes opaque and transparent areas and areas with a grating. The pitch of the periodic grating is of a lesser dimension than can be resolved by the masking projection apparatus. The photo-sensitive region illuminated by the grating receives uniform illumination at an intermediate intensity, thereby providing, after developing, a layer with regions of intermediate thickness.
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申请公布号 |
US4231811(A) |
申请公布日期 |
1980.11.04 |
申请号 |
US19790075095 |
申请日期 |
1979.09.13 |
申请人 |
INTEL CORPORATION |
发明人 |
SOMEKH, SASSON;AHLQUIST, C. NORMAN |
分类号 |
H01L21/027;H01L21/266;H01L21/336;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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