发明名称 Variable thickness self-aligned photoresist process
摘要 A process for forming with a single masking step regions of different thicknesses in a photo-sensitive layer is disclosed. A masking member or reticle includes opaque and transparent areas and areas with a grating. The pitch of the periodic grating is of a lesser dimension than can be resolved by the masking projection apparatus. The photo-sensitive region illuminated by the grating receives uniform illumination at an intermediate intensity, thereby providing, after developing, a layer with regions of intermediate thickness.
申请公布号 US4231811(A) 申请公布日期 1980.11.04
申请号 US19790075095 申请日期 1979.09.13
申请人 INTEL CORPORATION 发明人 SOMEKH, SASSON;AHLQUIST, C. NORMAN
分类号 H01L21/027;H01L21/266;H01L21/336;(IPC1-7):H01L21/26 主分类号 H01L21/027
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