| 摘要 |
PURPOSE:To form an electrode without disturbing any extremely shallow junction by irradiating a laser beam on the glass or polysilicone layer containing a large amount of impurity reversed in the conduction against the semiconductor substrate. CONSTITUTION:A silicone layer 5 containing phosphorus or arsenic equivalent to several atom percents is made at a low temperature to form an electrode in a region 4 limited by a silicone oxide film of an n-type layer 2 formed on the surface of a p-type silicone substrate 1. Then, a large output pulse laser beam is irradiated on the silicone layer 5 to anneal. As a result, the layer 5 is crystalized, thereby providing a lower resistance layer such as unavailable by the annealing with the conventional electric furnace. |
