| 摘要 |
PURPOSE:To improve the characteristics with an increased strength of the electrode part under an ohmic contact by forming the electrode coated with a metal on the nickel layer which has been formed on the vanadium layer on the surface of semiconductor substrate. CONSTITUTION:A given region is formed on the silicone substrate by diffusion and then undergoes a plasma etching. Then, a vanadium layer is formed at a given position on the surface of the substrate at a thickness of 800Angstrom by evaporation. Nickel is evaporated on the vanadium layer at a given thickness. The layer thus obtained is heated at 550 deg.C in a reducing atmosphere, for example, in an atmosphere of nitrogen. Then, on the nickel layer, nickel is evaporated to form a nickel layer 18000Angstrom , on which gold is evaporated to form a metal serving as an electrode under an ohmic contact. |
