发明名称 |
INTEGRATED SEMICONDUCTOR DEVICE |
摘要 |
High voltage diffusion-self-alignment metal oxide semiconductor devices and control logic circuitry therefor are integrated in a single semiconductor body. The integrated semiconductor device includes a considerably large number of output terminals compared to the number of input terminals. The output terminals develop signals of high voltages derived from the high voltage diffusion-self-alignment metal oxide semiconductor devices which are positioned at a peripheral zone of the semiconductor body. |
申请公布号 |
GB1577849(A) |
申请公布日期 |
1980.10.29 |
申请号 |
GB19770035723 |
申请日期 |
1977.08.25 |
申请人 |
SHARP KK |
发明人 |
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分类号 |
G09F13/22;G09F9/30;H01L21/266;H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H01L29/78 |
主分类号 |
G09F13/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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