| 摘要 |
PURPOSE:To form a resist pattern with a fine and good cross-sectional shape by incorporating a specified alkali soluble resin and a photosensitive agent in the photosensitive composition. CONSTITUTION:The photosensitive composition contains the alkali soluble resin which has >=50% transmissivity to the light having a wavelength of 248nm at the time of forming a film with 1.0mum thickness, and the photosensitive agent capable of being sensitized with the light having the wavelength of 248nm. The alkali soluble resin is exemplified by, for example, isopropenyl phenol, polyvinyl phenol or the polyvinyl phenol with an introduced silicon compd. having an alkyl group, etc. contg. silicon atom substd. in a benzene nucleus. The photosensitive agent is not specified, so far as the agent is sensitized with the light having the wavelength of 248nm. The agent is exemplified by, for example, a naphthoquinone diazide compd. and an azide compd. Thus, when the photosensitive composition is applied on a substrate as a resist film, and then the resist film is exposed with KrF exima laser, as the light can sufficiently reach a position away from the surface of the resist film, the resist pattern with the good cross-sectional shape can be formed. |
