| 摘要 |
PURPOSE:To have a correct connection of an electrode by connecting a scribe line and connecting hole, and by preventing completely a formation of a stain film at a connecting hole section. CONSTITUTION:In an etching process SiO2 film, an exposed Si may sometimes be contaminated and an electric connection at the following connection window may sometimes be impossible due to a stain film of a low graded oxide film. Moreover, an isolated small area in the vicinity of a wide area is especially apt to be contaminated. By connecting a scribe line 7 and a connecting hole 8, the hole 8 does not become an isolated small pattern, and is not stained when a hole is opened on an oxide film 2. Accordingly, an excellent connection can be obtained by forming an electrode 6, an electrode 5 is provided on the film 2 and an MOS capacity is completed. |
