发明名称 METHOD FOR DIVISION OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To make automatic wafer cutting work by a method wherein a groove is made in such a way that the thickness of a residual wafer film is about 20-100mum, and it is separated by pressing it from the plane where the groove is formed, and linking between processes before and after the division is improved. CONSTITUTION:An adhesive sheet 12 is attached to the rear surface of an wafer, and a groove is provided so that the residual thickness of the wafer becomes about 30mum, then the wafer 11 is placed on a stand 14. By adding pressure via isolation paper 13 using a roller 15, the wafer is separated. When the adhesive sheet 12 is not used, then residual thickness is set to about 50-100mum. Since the width of the groove becomes 30mum or over if a blade dicer is used, the corners of elements do not touch each other even if pressure is added to them from the surface when the residual thickness of the wafer is about 30mum. This method makes it possible to smoothly link the processes before and after the division automatically.</p>
申请公布号 JPS55138252(A) 申请公布日期 1980.10.28
申请号 JP19790045000 申请日期 1979.04.13
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 KAWAKAMI JIHEI;INOUE YOSHIAKI
分类号 H01L21/301;H01L21/78;(IPC1-7):01L21/78 主分类号 H01L21/301
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