发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To suppress the occurrence of hillock by a method wherein Ti is made to adhere to an Al wiring layer, and a Ti-Al alloy layer, which contains more than 40% of Ti and has a thickness of less than one-fifth of that of the Al wiring layer. CONSTITUTION:An Al layer 3 is formed by resistance heating and evaporating Al via an oxidized film 2 on an Si substrate 1, and the resistance heating and evaporation of Al and the electron beam heating and evaporation of Ti are simultaneously carried out so as to make an Al-Ti alloy layer. Since the suppression of hillock requires a layer 7 with a thickness of 10 odd-100 odd Angstrom , and since the construction having the reflection factor necessary for visual inspection is that which contains less than 40% of Ti, then it wears a silver white color inclining to green. If an Al-Ti alloy layer 7 is provided on the Al layer 3, it can prevent the occurrence of hillock and the oxidization of the surface, and improve the workability of wiring in addition to connecting wires, then making it easier to make visual inspection while a highly reliable device is obtained.
申请公布号 JPS55138259(A) 申请公布日期 1980.10.28
申请号 JP19790044237 申请日期 1979.04.13
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IBARAKI NOBUKI;IDE KIYOUZOU
分类号 H01L23/52;H01B1/00;H01B1/02;H01L21/28;H01L21/3205;H01L29/43 主分类号 H01L23/52
代理机构 代理人
主权项
地址