| 摘要 |
PURPOSE:To obtain highly reliable and minute wiring by a method wherein an Al- Ti alloy or TiAl3 layer is formed after providing an Al layer on a part of a semiconductor substrate and covering it with a Ti layer, then heat treating it in such an atmosphere that reducibility is zero, and Ti which has not reacted yet is removed in a reducible atmosphere with the use of an ultrasonic wave. CONSTITUTION:An Al layer 3 is partially formed on an Si substrate through an SiO2 film 2, and Ti4 is evaporated so as to form a thin film 5 of an Al-Ti alloy or TiAl2 after heat processing it in a gas of H2+N2. Ti which has not reacted yet is selectively removed in a liquid of quatri-ethylene-diamine quatri-acetic acid-NH4OH- H2O2-H2O series. At this time, the use of an ultrasonic wave is more effective for the process. Next if it is covered with PSG6, no abnormal growth based on the hillock is produced because of the layer 5, and the corrosion of Al does not occur, thus making it possible to form highly reliable Al wiring. |
