| 摘要 |
PURPOSE:To simplify high-density implementation by reducing a memory cell in size by writing binary information in the memory cell via one colum array line. CONSTITUTION:One memory cell 6 consists of flip-flop circuits Q1 and Q2, and gate element Q5, and the transistor of either flip-flop circuit Q1 or Q2 is connected to column array line 4 via gate element Q5 so as to write binary information in cell 6 via one column array line 4. Consequently, the memory cell is reduced in size, wherefore high-density implementation comes into effect easily. |
