发明名称 |
SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of forming a thin film having a low contact resistance by a cylindrical sputtering target.SOLUTION: When arranging a cylindrical sputtering target 21 inside a vacuum chamber 11 and reaching sputtering particles to a moving object 2 to be deposited to form a thin film, emission direction particles emitted from first and second places having zero of a magnetic force component in the emission direction out of the outer peripheral surface of the sputtering target 21 is moved from an upstream place and is emitted toward a portion of the object 2 to be deposited moving a downstream place after meeting the sputtering target 21. An initial thin film is formed by sputtering particles without including the emission direction particles.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016132807(A) |
申请公布日期 |
2016.07.25 |
申请号 |
JP20150008702 |
申请日期 |
2015.01.20 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
SHIRAI MASAKI;TAKI AKIRA;TAKAZAWA SATORU;ISHIBASHI AKIRA |
分类号 |
C23C14/34;C23C14/08;C23C14/35;H01L21/28;H01L21/285 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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