发明名称 SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a technique capable of forming a thin film having a low contact resistance by a cylindrical sputtering target.SOLUTION: When arranging a cylindrical sputtering target 21 inside a vacuum chamber 11 and reaching sputtering particles to a moving object 2 to be deposited to form a thin film, emission direction particles emitted from first and second places having zero of a magnetic force component in the emission direction out of the outer peripheral surface of the sputtering target 21 is moved from an upstream place and is emitted toward a portion of the object 2 to be deposited moving a downstream place after meeting the sputtering target 21. An initial thin film is formed by sputtering particles without including the emission direction particles.SELECTED DRAWING: Figure 5
申请公布号 JP2016132807(A) 申请公布日期 2016.07.25
申请号 JP20150008702 申请日期 2015.01.20
申请人 ULVAC JAPAN LTD 发明人 SHIRAI MASAKI;TAKI AKIRA;TAKAZAWA SATORU;ISHIBASHI AKIRA
分类号 C23C14/34;C23C14/08;C23C14/35;H01L21/28;H01L21/285 主分类号 C23C14/34
代理机构 代理人
主权项
地址