| 摘要 |
PURPOSE:To facilitate connection of numbers of leads with efficiency by forming an electrode used for gang-bonding around an integrated circuit chip and forming an electrode used for wire-bonding inside the fore-mentioned electrode. CONSTITUTION:Electrode 32 used for gang-bonding and electrode 33 used for wire- bonding are formed around an integrated circuit chip 31, with the former in the outside. A beam lead 42 made of Cu plated with Au is mounted on the semiconductor chip, and then an integrated circuit 41 having the beam lead 42 mounted thereon is bonded to an integrated circuit cast. After then, an end of the beam lead 42 is heat-pressure-bonded to an intermal pole 45 plated with Au. This is performed by a film carrier method. At last, the electrode 33 for wire-bonding is connected to an intermal electrode 44 of the integrated circuit case upper stage via a wire 43. |
