METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the characteristics of a semiconductor device with equal characteristics by diffusing impurity having the first conduction type on a semiconductor substrate, etching the surface of the diffused region with alkaline solution and diffusing impurity having the second conduction type in the above diffused region thus treated. CONSTITUTION:An impurity having the first conduction type (p-type) is diffused in a semiconductor substrate. The surface of the diffused region (a base region) 3 thus formed is then etched with alkaline solution. This treatment can remove unstable region of impurity density and crystal lattice defective layer 7 on the surface of the base region 3. Thereafter, A CVD film having an n-type impurity is adhered in the same manner as the conventional manner, it is thermally diffused to form an emitter region on the surface of the base region 3.