| 摘要 |
A method for use in making semiconductor type electrical devices such as solar cells. In the method, a wafer of semiconductor material having two major surfaces is provided, the wafer being doped with an impurity of one conductivity type. A layer of a metal-containing compositions such as aluminum, is placed on one of the major surfaces of the wafer, and the wafer is then heated in the presence of an impurity of the opposite conductivity type to a temperature such that a high-low junction is formed by the metal at one major surface while the impurity of the opposite conductivity type diffuses or penetrates the other major surface to form a p-n junction thereat.
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