| 摘要 |
PURPOSE:To incorporate a Schottky barrier diode SBD into an element of a high pressure resistance at a high degree of integration by partially combining in an N<->- type substrate a P-type diffusion layer with a N<+> layer which is shallower than the P-type diffusion layer. CONSTITUTION:A deep P layer 41 is provided in an N<-> substrate 40, and N<+> layers 42, 43 which are shallower than the layer 41 are formed inside and outside the layer 41. Since the base layer 41 is deep, the concentration of impurities is low. Therefore, P<+> layers 47 are provided to secure the ohmic contact of a base terminal B, and an aluminum layer 45b is formed thereon. According to this structure, base and collector of a NPN transistor are clamped at a low voltage by a SBD formed with the aluminum electrode B and Si substrate 40, and minority carriers are not accumulated in the junction section. This structure permits a high speed switching operation and preventing lateral diffusion owing to the guard ring 47. Thus, an integrated circuit having a high pressure resistance, into which a SBD of desired characteristics is incorporated with a minimal increase in area. |
