| 摘要 |
PURPOSE:To improve mobility greatly by a simple method wherein a III-V group compound, such as InSb, is evaporated on an insulator substrate, and thereby a semiconductor Hall element is formed, and by covering this with an insulating film, a specified current is supplied and it is recrystallize. CONSTITUTION:On a insulator substrate 1, made of insulated ferrite, alumina, glass, is evaporated a thin film 2, made of a III-V group compound, such as InSb, InAs, GaAs and thereby semiconductor Hall element 4 is formed. Next, this film 2 is recrystallized. But, at this time, in order to prevent re-evaporation of the thin film 2, the front and side surfaces of the thin film 2 are all covered with insulating, evaporated film 3, made of Al2O3, SiO2 or the like, having a higher melting point than that of the film 2. Subseqnently, a current of a specified value is supplied to the thin film 2 for a few minutes and the film is heated and recrystalized, and thereby the mobility is increased. By this, it becomes unnecessary to use a large- scale facility, such as microzone melting, and the improvement of mobility is greatly simplified. |
