| 摘要 |
PURPOSE:To prevent short-circuit and disconnection of wires of a high thermal conductive resin molded semiconductor element by selecting the special diameter of wire responsive to the height of the loop of the bonded wire and the distance between the bonding pad and the bonding post of the lead wire. CONSTITUTION:The bonding pad 2a of a power semiconductor element 2 such as a power transistor, a power IC or the like is connected to lead frames 3 through bonding wires 4, and the semiconductor element is molded with high thermal conductive resin 5 such as epoxy or silicone resin or the like added with crystalline silica thereto. When the height h of the bonding loop is less than 250mu, if the distance between the bonding pad and the bonding post 3c of the lead frames is less than 3mm, the diameter of the wire is set at 25mu; while if the distance therebetween is longer than 3mm, the diameter of the wire is set at 30mu or longer. When the height h of the bonding loop is higher than 250mu, the diemater of the wire is set at 38mu or longer. Thus, it can prevent the short-circuit and disconnection of the wires due to the wire flow when sealing it with resin. |
