| 摘要 |
PURPOSE:To perform well-controlled fine processing without causing deterioration in and unnecessary deposition on resist by the procedure in which high-frequency power is applied to parallel plate electrode on which a sample such as Al film is arranged, counter electrode is earthed, the sample is etched, the electrode on the sample side is earthed, and then high-frequency power is applied to the counter electrode. CONSTITUTION:Etching is made by introducing a gas, e.g., CCl4, containing Cl atom into the vacuum container 1, earthing the upper electrode 2 of parallel plate type, and applying high-frequency power to the lower electrode 3 on which the sample 6 is provided. Then, several ten seconds after the application of power, when the intensity of emission spectrum reaches a fixed value, the application of power is stopped, the coaxial switch 14 and the switches 19 and 20 are switched, the lower electrode 3 is earthed, and then high-frequency power is applied to the upper electrode 2 for etching. The intensity of emission spectrum which reached a certain value is shown by the etching monitor 22, but it is rapidly reduced to indicate the completion of etching. |
