| 摘要 |
PURPOSE:To increase the electrostatic breakdown withstand voltage between the emitter and the base of a transistor by providing the same conducting impurity density region as a base in the vicinity of the base electrode at the emitter and the base junction surfaces. CONSTITUTION:A second conducting base region 2 is formed in a first conducting collector region 1, and a second conducting high impurity region 3 is formed at the emitter and the base junction portion in the base region 2. There are then provided an emitter region 4, a protective film 5 and electrodes 6, 7. Thus, it can reduce the resistance at the emitter and the base junction portion to reduce the heating thereat so as to prevent heat breakdown of the transistor. Accordingly, it can provided a large electrostatic breakdown withstand voltage at the transistor. |
