| 摘要 |
PURPOSE:To prevent disconnection of a gate wire of an insulated gate type field effect transistor by entirely shielding the peripheral edge and the end surface of a gate electrode with the gate wires. CONSTITUTION:An aluminum film connected to the p-type source region 2 and the p-type drain region 3 through a source opening 7 and a drain opening 8, respectively is formed on a SiO2 film 5 including over the gate electrode 6. Then, a source wire 9, drain wire 10 and gate wire 11a are simultaneoulsy etched to be formed. The gate wire 11a is so formed as to entirely shield the peripheral edge and the end surface of the gate electrode 6. Thus, when forming an aluminum on the SiO2 film 5 including the gate electrode 6 due to the existence of the gate wire 1a, even if there is produced an air gap (a) at the stepped portion on the end surface of the electrode 6, the etching solution does not enter into the gap (a). Accordingly, it can prevent the disconnection of the gate wire of the transistor. |
