| 发明名称 |
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| 摘要 |
1412438 Semiconductor diffusion INTERNATIONAL BUSINESS MACHINES CORP 22 Nov 1972 [2 Dec 1971] 54044/72 Heading H1K Zinc is diffused into a GaAs substrate in an evacuated container at a temperature between 800‹ and 1000‹ C. (e.g. 900‹ C.) in the presence of a two-phase system of Si and As to attain controllable shallow diffused regions. The Si-As system contains SiAs in the solid solution, and may comprise 2 to 50 (preferably 2À8) atomic per cent. As; it may be prepared as described in Specification 1,292,374. The dopant source may be Zn; ZnAs 2 ; Ga-Zn alloy; mixtures of Zn and As; ZnAs 2 and As; GaAs, ZnAs, and ZnAs 2 ; or preferably a homogenized mixture of Zu and GaAs. The substrate may be doped with Sn to a concentration of 1-3 x 10<SP>18</SP> atoms/cc. |
| 申请公布号 |
DE2257047(C3) |
申请公布日期 |
1980.09.11 |
| 申请号 |
DE19722257047 |
申请日期 |
1972.11.21 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y. (V.ST.A.) |
发明人 |
BASI, JAGTAR SINGH, WAPPINGERS FALLS;LYONS, VINCENT JAMES, POUGHKEEPSIE |
| 分类号 |
H01L21/22;C30B31/06;C30B31/16 |
主分类号 |
H01L21/22 |
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