| 摘要 |
<p>PURPOSE:To obtain the light valve device which has high resolution and high sensitivity by forming a semiconductor layer of a material which has high sensitivity to the wavelength of write light. CONSTITUTION:A transparent substrate 11, a transparent conductive layer 12, a semiconductor layer 13, a light shield layer 14, a dielectric mirror 15, a polyimide film 16, a dielectric layer 17 with electrooptic effect, a polyimide film 18, a transparent conductive layer 19, and a transparent substrate 20 are laminated in order. The semiconductor material with high resistivity, e.g. amorphous silicon is used for the semiconductor layer 13 and a different kinds of material, e.g. germanium is mixed with it to vary the band gap of the semiconductor material, thereby optimizing the relative sensitivity to the wavelength of the write light WL. Consequently, the semiconductor layer 13 is provided with high sensitivity and high-resolution characteristics, so readout light RL is outputted in a high-contrast, high-resolution state.</p> |
