| 发明名称 |
A field effect transistor. |
| 摘要 |
<p>In a field effect transistor having interdigital electrodes the gate bonding pad portion is situated in the space formed between a pair of adjacent divided portions of the active region of the field effect transistor.</p> |
| 申请公布号 |
EP0015072(A1) |
申请公布日期 |
1980.09.03 |
| 申请号 |
EP19800300256 |
申请日期 |
1980.01.29 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
HIRANO, YUTAKA |
| 分类号 |
H01L29/80;H01L21/338;H01L29/417;H01L29/423;H01L29/812;(IPC1-7):01L29/60;01L29/80 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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