| 摘要 |
PURPOSE:To obtain a resistance layer by providing a mask having two openings at a fixed distance on the main surface of a semiconductor and connecting diffusion layers on both sides. CONSTITUTION:From diffusion windows 20, 21 provided at a distance on n<->-type Si substrate 19, p-layers 17, 18 are formed and connected in their low concentration parts. When the depth from the surface of the p-layer is xj, the distance xi of diffusion from end 31 of the diffusion window is xi 0.9xj. Consequently, if the distance l between windows 20 and 21 is set at l<=2X0.9xj, layers 17, 18 are linked together. The depth of diffusion in the lateral direction is linearly approximated, and also the rate of decrease of the average conductivity is linearly approximated, and thereby it is assumed that the diffusion distances in both lateral and vertical directions are the same. When the distance from window end 31 is set x=l/2 and the width of contact between layers 17, 18 is set at W3, the entire resistance R becomes a monotonous increasing function of l. Consequently, it is possible to provide an arbitrary resistance by a small distance l. |
