| 摘要 |
PURPOSE:To improve, in semiconductor device having elements arranged on a lead frame, the bonding strength between the brazing material and semiconductor element, by disposing a nickel-plating layer and a phosphorus-containing plating layer on the portions of the lead frame where the elements are to be mounted. CONSTITUTION:A bright electro-plating layr 3b of nickel and a nickel plating layer 13b containing phosphorus are formed on the surface of a substrate 3a. A brazing material 16 is press-contacted against the plating layer 13b and is then molten. A semiconductor element 4 is mounted on the molten brazing material 16. Since the standard oxide-forming energy of phosphorus contained by the nickel-phsphorus alloy plating layer is lower than those of the brazing material and the lead frame, the nickel plating on the brazing material and lead frame are activated to provide a stronger bonding between the brazing material and the semiconductor element.
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