发明名称 |
METHOD OF PRODUCING INSULATING FILM FOR SEMICONDUCTOR SURFACES |
摘要 |
Method of producing an insulating film for semiconductor surfaces, in which a silicon substrate is subjected to direct nitriding to thereby produce a film of silicon nitride. The silicon substrate is first subjected to a direct heat-nitriding treatment to produce a relatively thick film of silicon nitride. The silicon substrate is then subjected to a nitriding treatment in aqueous ammonia or an inert gas atmosphere containing gaseous ammonia, thereby to produce a dense and relatively thick film of silicon nitride. The resultant film of silicon nitride is useful for an insulating film for semiconductor devices and also a mask for impurity diffusion or selective oxidation in the production of the semiconductor devices. |
申请公布号 |
WO8001739(A1) |
申请公布日期 |
1980.08.21 |
申请号 |
WO1979JP00039 |
申请日期 |
1979.02.19 |
申请人 |
FUJITSU LTD;NOZAKI T;ITO T |
发明人 |
NOZAKI T;ITO T |
分类号 |
H01L21/318;(IPC1-7):01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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